Density of amorphous sputtered Ge₂Sb₂Te₅ thin films

The density, crystallinity, and microstructure of reactively sputtered amorphous Ge2Sb2Te5 thin films have been assessed as a function deposition temperature. continuous density increase was observed with increasing substrate temperature between room 200 °C. deposited at are exhibit columnar structure lateral size cells in the 10–15 nm range. Cells consist high-density interior boundaries lower by ∼9% due to incorporation pores. pores can be eliminated 80 °C while still preserving phase. pore- stress-free is 6.16 g/cm3 only 1.5% than crystalline NaCl structure.